Minimizing Plasma Damage and in situ Sealing of Ultra Low-k Dielectric Films by using Oxygen Free Fluorocarbon Plasmas

Mannaert, G.;Baklanov, M. R.;Le, Q. T.;Travaly, Youssef;Jonas, Alain;et.al.
(2005) Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures — Vol. 23, n° 5, p. 2198-2202 (2005)

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  • Mannaert, G.IMEC
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  • Baklanov, M. R.IMEC
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  • Le, Q. T.IMAC
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  • Travaly, YoussefIMEC
    Author
  • Jonas, Alainorcid-logoUCLouvain
    Author
  • et. al.
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Abstract
Ultralow-k nanocrystalline silica films with an open porosity of 30–31% and a pore radius of 0.8–0.9 nm have been etched using oxygen free highly polymerizing fluorocarbon plasma. It is shown that such plasma allows minimization of plasma damage in comparison with standard oxygen containing CF4 based plasmas and provides in situ sealing of the pores by deposition of fluorocarbon polymers in the film. We also demonstrate that the resulting surface is well suited for the nucleation and growth of atomic layer deposited WCN films. Characterization of the etched low-kdielectric by various analytical instrumentations demonstrates feasibility of this approach for integration of ultralow-kdielectric films.
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Mannaert, G., Baklanov, M. R., Le, Q. T., Travaly, Y., Boullart, W., Vanhaelemeersch, S., Jonas, A., & et al. (2005). Minimizing Plasma Damage and in situ Sealing of Ultra Low-k Dielectric Films by using Oxygen Free Fluorocarbon Plasmas. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 23(5), 2198-2202. https://doi.org/10.1116/1.1961910 (Original work published 2005)