Low-power dihexylquaterthiophene-based thin film transistors for analog applications.
(2008) Applied Physics Letters — Vol. 92, n° 14, p. 143503 (2008)
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- Authors
Nysten, Bernard 
- Abstract
- We have optimized dihexylquaterthiophene-based thin film transistors for low-power consumption and have studied their characteristics for potential introduction in analog circuits. Bottom-gate devices with Pd source and drain electrodes have been fabricated by employing different gate dielectrics. Transistors with very thin (< 10 nm) silicon oxynitride dielectrics display subthreshold swing values below 100 mV/decade, cutoff frequencies approaching the kilohertz range and intrinsic gain around 45 dB, suggesting that they are promising candidates for low-power analog integration.
- Affiliations
Citations
Serban, D. A., Flandre, D., Kilchytska, V., Vlad, A., Martin-Hoyas, A., Nysten, B., Jonas, A., Geerts, Y. H., Lazzaroni, R., Bayot, V., & Melinte, S. (2008). Low-power dihexylquaterthiophene-based thin film transistors for analog applications. Applied Physics Letters, 92(14), 143503. https://doi.org/10.1063/1.2904963 (Original work published 2008)