Direct protein detection with a nano-interdigitated array gate MOSFET.
(2009) Biosensors and Bioelectronics — Vol. 24, n° 12, p. 3531-3537 (2009)
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- Authors
Pampin, Rémi 
- Abstract
- A new protein sensor is demonstrated by replacing the gate of a metal oxide semiconductor field effect transistor (MOSFET) with a nano-interdigitated array (nIDA). The sensor is able to detect the binding reaction of a typical antibody Ixodes ricinus immunosuppressor (anti-Iris) protein at a concentration lower than 1ng/ml. The sensor exhibits a high selectivity and reproducible specific detection. We provide a simple model that describes the behavior of the sensor and explains the origin of its high sensitivity. The simulated and experimental results indicate that the drain current of nIDA-gate MOSFET sensor is significantly increased with the successive binding of the thiol layer, Iris and anti-Iris protein layers. It is found that the sensor detection limit can be improved by well optimizing the geometrical parameters of nIDA-gate MOSFET. This nanobiosensor, with real-time and label-free capabilities, can easily be used for the detection of other proteins, DNA, virus and cancer markers. Moreover, an on-chip associated electronics nearby the sensor can be integrated since its fabrication is compatible with complementary metal oxide semiconductor (CMOS) technology.
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Citations
Tang, X., Jonas, A., Nysten, B., Demoustier, S., Blondeau, F., Prévot, P.-P., Pampin, R., Godfroid, E., Iñiguez, B., Colinge, J.-P., Raskin, J.-P., Flandre, D., & Bayot, V. (2009). Direct protein detection with a nano-interdigitated array gate MOSFET. Biosensors and Bioelectronics, 24(12), 3531-3537. https://doi.org/10.1016/j.bios.2009.05.012 (Original work published 2009)