An organic ferroelectric field effect transistor with poly(vinylidene fluoride-co-trifluoroethylene) nanostripes as gate dielectric
(2014) Applied Physics Letters — Vol. 105, n° 11, p. 113113 (2014)
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- Abstract
- We demonstrate the fabrication of an organic Ferroelectric Field Effect Transistor (FeFET) incorporating a ferroelectric gate dielectric made of nanostripes obtained by nanoimprinting poly(vinylidene fluoride-co-trifluoroethylene) over a layer of semiconducting poly(triarylamine). The imprinting process results in a decreased switching voltage for the ferroelectric, by a factor of ca. 1.5, resulting in a decreased operating voltage compared to a reference FeFET with a continuous ferroelectric layer. The transistor consists of a large number of nanostripe-gated transistors placed in parallel, which also offers interesting possibilities for a strong size reduction of organic FeFETs.
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Citations
Cai, R., Kassa, H. G., Marrani, A., van Breemen, A. J. J. M., Gelinck, G. H., Nysten, B., Hu, Z., & Jonas, A. (2014). An organic ferroelectric field effect transistor with poly(vinylidene fluoride-co-trifluoroethylene) nanostripes as gate dielectric. Applied Physics Letters, 105(11), 113113. https://doi.org/10.1063/1.4896292 (Original work published 2014)