Nanoscale Design of Multifunctional Organic Layers for Low-Power High-Density Memory Devices
(2014) ACS Nano — Vol. 8, n° 4, p. 3498-3505 (2014)
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- We demonstrate the design of a multifunctional organic layer by the rational combination of nanosized regions of two functional polymers. Instead of relying on a spontaneous and random phase separation process or on the tedious synthesis of block copolymers, the method involves the nanomolding of a first component, followed by the filling of the resulting open spaces by a second component. We apply this methodology to fabricate organic nonvolatile memory diodes of high density. These are built by first creating a regular array of ferroelectric nanodots by nanoimprint lithography, followed by the filling of the trenches separating the ferroelectric nanodots with a semiconducting polymer. The modulation of the current in the semiconductor by the polarization state of the ferroelectric material is demonstrated both at the scale of a single semiconductor channel and in a microscopic device measuring about 80 000 channels in parallel, for voltages below ca. 2 V. The fabrication process, which combines synergetically orthogonal functional properties with a fine control over their spatial distribution, is thus demonstrated to be efficient over large areas.
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Citations
Nougaret, L., Kassa, H. G., Cai, R., Patois, T., Nysten, B., van Breemen, A. J. J. M., Gelinck, G. H., de Leeuw, D. M., Marrani, A., Hu, Z., & Jonas, A. (2014). Nanoscale Design of Multifunctional Organic Layers for Low-Power High-Density Memory Devices. ACS Nano, 8(4), 3498-3505. https://doi.org/10.1021/nn406503g (Original work published 2014)