Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer
(2015) SPIE Organic Photonics + Electronics Conference — Location: San Diego, CA, USA (9.August.2015)
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- Abstract
- Ferroelectric poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE), is increasingly used in organic non-volatile memory devices, e.g., in ferroelectric field effect transistors (FeFETs). Here, we report on FeFETs integrating nanoimprinted arrays of P(VDF-TrFE) nanowires. Two reviously-unreported architectures are tested, the first one consisting of stacked P(VDF-TrFE) nanowires placed over a continuous semiconducting polymer film; the second one consisting of a nanostriped blend layer wherein the semiconducting and ferroelectric components alternate regularly. The devices exhibit significant reversible memory effects, with operating voltages reduced compared to their continuous film equivalent, and with different possible geometries of the channels of free charge carriers accumulating in the semiconductor.
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Cai, R., Kassa, H. G., Marrani, A., van Breemen, A. J. J. M., Gelinck, G. H., Nysten, B., Hu, Z., & Jonas, A. (2015). Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer. SPIE - the International Society for Optical Engineering. Proceedings, 9569(Printed Memory and Circuits), 95690G. https://doi.org/10.1117/12.2185677 (Original work published 2015)