Radiation Effect On Electrical Properties Of Fully-Depleted Unibond SOI MOSFETS

Houk, Youri;Nazarov, A.N.;Turchanikov, V.I.;Lysenko, V.S.;Flandre, Denis;et.al.
(2004) Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment — p. 233-239, published

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  • Houk, YouriNational Academy of Sciences of Ukraine
    Author
  • Nazarov, A.N.National Academy of Sciences of Ukraine
    Author
  • Turchanikov, V.I.National Academy of Sciences of Ukraine
    Author
  • Lysenko, V.S.National Academy of Sciences of Ukraine
    Author
  • Adriaensen, StéphaneUCLouvain
    Author
  • Flandre, DenisUCLouvain
    Author
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Abstract
A radiation effect on edgeless FD accumulation mode (AM) p-channel and inversion mode (IM) n-channel MOSFETs, fabricated on UNIBOND SOI wafers, is investigated. The method of second derivative is used to determine the threshold voltages of front and back channels in the MOSFETs from the measurements of front-gate transistors only. Stronger irradiation effect on IM n-MOSFET than that on AM p-MOSFET is revealed. It has been showed, that radiation-induced positive charge in the BOX inverted back interface causes back channel creation in IM n-MOSFET but no such effect in AM p-MOSFET has been observed. It is demonstrated that small-doses have the effect of improving the quality of both interface.
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Houk, Y., Nazarov, A. N., Turchanikov, V. I., Lysenko, V. S., Adriaensen, S., & Flandre, D. (2004). Radiation Effect On Electrical Properties Of Fully-Depleted Unibond SOI MOSFETS. In D. Flandre, A.N. Nazarov, P.L.F. Hemment (ed.), Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment (p. p. 233-239). Kluwer Academic Publishers. https://hdl.handle.net/2078.5/26763