Characterization and Modeling of Low-frequency Noise in IGZO Source-Gated Transistors
(2025) Symposium on Schottky Barrier MOS Devices 2025 “Schottky barrier devices at the edge” — Location: Vienna, Austria (17.November.2025)
Files
SSBMOS2025_QiChen.pdf
Open Access - Adobe PDF
- 2.09 MB
Details
- Authors
- et. al.
- Affiliations
Citations
Chen, Q., & et al. (2025). Characterization and Modeling of Low-frequency Noise in IGZO Source-Gated Transistors. Symposium on Schottky Barrier MOS Devices 2025 “Schottky barrier devices at the edge”, Vienna, Austria.