Electron mobility in silicon under high uniaxial strain
(2025) Solid-State Electronics — Vol. 227 (2025)
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- Authors
Roisin, Nicolas 
- Abstract
- In the pursuit of improving the performance of semiconductor devices, the manipulation of material properties through strain engineering has emerged as a promising avenue. In this work, the enhancement of the electron mobility in silicon has been experimentally investigated for uniaxial strain up to almost 1% along the [100] crystal direction. The experimental data have been obtained from n-doped silicon beams strained using four-point bending scheme. To complement the experimental measurements that present a mobility enhancement of about 65%, first-principles calculations have been conducted to determine the splitting of the conduction bands and the changes in the effective masses induced by the strain. A semi-empirical model is finally used to predict the undoped behavior, which forecast a mobility increase close to 1000 cm2V−1s−1 for a strain of about 1%.
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Citations
Roisin, N., Lahaye, L., Raskin, J.-P., & Flandre, D. (2025). Electron mobility in silicon under high uniaxial strain. Solid-State Electronics, 227. https://doi.org/10.1016/j.sse.2025.109118 (Original work published 2025)