Improving electrical performance and fringe effect in p-type SnOx thin film transistors via Ta incorporation
(2025) Journal of Semiconductors — Vol. 46, n° 9 (2025)
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- In this work, the incorporation of tantalum (Ta) into p-type metal-oxide (SnOx) semiconductor film is investigated to improve the electrical characteristics and suppress the fringe effect of thin film transistors (TFTs). The Ta-doped SnOx(SnOx:Ta) film is deposited by radio-frequency (RF) magnetron sputtering with a Sn:Ta (3 at.%) target and thermally annealed at 270 °C for 30 min. Here, we observe that the SnOx:Ta film presents increased crystallinity, reduced defect density (3.25 × 1012 cm−2·eV−1), and widened bandgap (1.98 eV), in comparison with the undoped SnOx film. As a result, the SnOx:Ta TFTs exhibit a lower off-state current (Ioff), an improved on/off current ratio (2.17 × 104), a remarkably decreased subthreshold swing (SS) by 41%, and enhanced device stability. Additionally, by introducing Ta dopants, the fringe effect as well as the impact of channel width-to-length ratio (W/L) on electrical performances of the p-type oxide TFTs can be effectively suppressed. These results shall contribute to further exploration and development of p-type SnOx TFTs.
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Song Yu, Runtong Guo, Ruohao Hong, Rui He, Xuming Zou, Benjamin Iñiguez, Flandre, D., Lei Liao, & Li, G. (2025). Improving electrical performance and fringe effect in p-type SnOx thin film transistors via Ta incorporation. Journal of Semiconductors, 46(9). https://doi.org/10.1088/1674-4926/25010031 (Original work published 2025)