Reconstructing the potential configuration in a high-mobility semiconductor heterostructure with scanning gate microscopy
(2023) SciPost Physics — Vol. 15, n° 6, p. 1-23 (2023)
Files
SciPostPhys_15_6_242.pdf
Open Access - Adobe PDF
- 1.17 MB
Details
- Authors
- Abstract
- The weak disorder potential seen by the electrons of a two-dimensional electron gas in high-mobility semiconductor heterostructures leads to fluctuations in the physical properties and can be an issue for nanodevices. In this paper, we show that a scanning gate microscopy (SGM) image contains information about the disorder potential, and that a machine learning approach based on SGM data can be used to determine the disorder. We reconstruct the electric potential of a sample from its experimental SGM data and validate the result through an estimate of its accuracy.
- Affiliations
Citations
Percebois, G. J., Lacerda-Santos, A., Brun, B., Hackens, B., Waintal, X., & Weinmann, D. (2023). Reconstructing the potential configuration in a high-mobility semiconductor heterostructure with scanning gate microscopy. SciPost Physics, 15(6), 1-23. https://doi.org/10.21468/scipostphys.15.6.242 (Original work published 2023)