Low-temperature admittance spectroscopy for defect characterization in Cu(In,Ga)(S,Se)2 thin-film solar cells
(2023) IEEE EUROCON 2023 - 20th International Conference on Smart Technologies — Location: Torino, Italy (6.July.2023)
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Low-temperature_admittance_spectroscopy_for_defect_characterization_in_CuInGaSSe2_thin-film_solar_cells.pdf
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- Authors
Scaffidi, Romain 
- Abstract
- We present a methodology to use low-temperature admittance measurements for characterizing defects in thin-film Cu(ln,Ga)(S,Se)2 solar cells, which is a major step towards increased performance. We develop the theory behind admittance spectroscopy at both room and low temperature, focusing on the so-called “loss-map” graphical representation. It allows to distinguish the entangled responses of different loss mechanisms and, combined with SCAPS 1- D simulations, leads to a refined interpretation of experimental admittance measurements. Using this methodology on experimental measurements, we identify the likely presence of an interface defect, and extract its activation energy and capture cross-section .
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Citations
Parion, J., Scaffidi, R., Flandre, D., Brammertz, G., & Vermang, B. (2023). Low-temperature admittance spectroscopy for defect characterization in Cu(In,Ga)(S,Se)2 thin-film solar cells. IEEE EUROCON 2023 - 20th International Conference on Smart Technologies. Published. IEEE EUROCON 2023 - 20th International Conference on Smart Technologies, Torino, Italy. https://doi.org/10.1109/EUROCON56442.2023.10199008