Influence of HALO implantation on analog performances and comparison between bulk, Partially-Depleted and Fully-Depleted MOSFETs
(2002) 2002 IEEE International SOI Conference — Location: Wiliamsburg (USA) (7.October.2002)
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- Abstract
- The influence of HALO implantation on analog device characteristics has been studied and compared for bulk, PD and FD SOI MOSFETs. It has been shown that whereas HALO implantation is needed for base-band applications preferably using longer channel, it has a detrimental effect for high-speed applications using minimum channel length transistors in strong inversion.
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Vancaillie, L., Kilchytska, V., Levacq, D., Adriaensen, S., van Meer, H., De Meyer, K., Torrese, G., Raskin, J.-P., & Flandre, D. (2002). Influence of HALO implantation on analog performances and comparison between bulk, Partially-Depleted and Fully-Depleted MOSFETs. Proceedings of the 2002 IEEE International SOI Conference, 161-162. https://doi.org/10.1109/SOI.2002.1044459