A SOI CMOS smart strain sensor

Rue, Bertrand;Olbrechts, Benoit;Raskin, Jean-Pierre;Flandre, Denis
(2011) IEEE International SOI Conference (SOI 2011) — Location: Tempe (USA) (3.October.2011)

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Abstract
A CMOS strain sensor has been fabricated in a 1μm FD SOI CMOS process. It is based on the piezoresistive effects of PMOS transistors and integrates a frequency conversion circuit. Testing of the chip mounted on a bent hard steel blade shows fair sensitivity for 10 μW power consumption.
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Rue, B., Olbrechts, B., Raskin, J.-P., & Flandre, D. (2011). A SOI CMOS smart strain sensor. Proceedings of the IEEE International SOI Conference (SOI 2011), 1-2. https://doi.org/10.1109/SOI.2011.6081791