Variable Barrier Resonant Tunneling Transistor: A New Path Towards Steep Slope and High On-Current?

Afzalian, Aryan;Colinge, Jean-Pierre;Flandre, Denis
(2010) 2010 EUROSOI Conference — Location: Grenoble (France) (25.January.2010)

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Authors
  • Afzalian, AryanTyndall National Institute, University of Cork
    Author
  • Colinge, Jean-PierreTyndall National Institute, University of Cork
    Author
  • Flandre, DenisUCLouvain
    Author
Abstract
A new concept of nanoscale MOSFET, the Variable-Barrier Resonant Tunneling Transistor, is presented and modeled using 3D Non-Equilibrium Green Function simulations. Owing to the presence of variable tunnel barrier(s) designed to be at the onset of resonant tunneling regime, we predict steep subthreshold slope as steep as 45mV/dec, together with high on-current and high Ion/Ioff current ratios in Si nanowire transistors.
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Afzalian, A., Colinge, J.-P., & Flandre, D. (2010). Variable Barrier Resonant Tunneling Transistor: A New Path Towards Steep Slope and High On-Current? Proceedings of the 2010 EUROSOI Conference, p. 109-110. https://hdl.handle.net/2078.5/253441