Dependence of the Optimum Length of Lightly Doped Region of GC SOI nMOSFET with Front Gate Bias

Assalti, R.;Pavanello, Marcelo Antonio;Flandre, Denis;de Souza, Michelly
(2014) 29th Symposium on Microelectronics Technology and Devices (SBMicro 2014) — Location: Aracaju (Brazil) (1.September.2014)

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Authors
  • Assalti, R.Centro Universitario da Fei, Brazil
    Author
  • Pavanello, Marcelo AntonioCentro Universitario da Fei, Brazil
    Author
  • Flandre, DenisUCLouvain
    Author
  • de Souza, MichellyCentro Universitario da Fei, Brazil
    Author
Abstract
This work assesses the analog performance of Graded-Channel FD SOl nMOSFET transistors regarding the dependence of gate voltage overdrive over the length of lightly doped region which maximizes the intrinsic voltage gain, unit gain frequency and breakdown voltage. It is shown that the optimum length of lightly doped region depends on the target application of GC devices.
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Assalti, R., Pavanello, M. A., Flandre, D., & de Souza, M. (2014). Dependence of the Optimum Length of Lightly Doped Region of GC SOI nMOSFET with Front Gate Bias. 29th Symposium on Microelectronics Technology and Devices (SBMicro 2014), Aracaju (Brazil). https://hdl.handle.net/2078.5/253428