28 nm FD SOI Technology Platform RF FoM
(2014) 2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S 2014) — Location: Millbrae (USA) (6.October.2014)
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- Abstract
- This work provides a detailed study of 28 nm fully depleted silicon-on-insulator (FD SOI) ultra-thin body and buried oxide (BOX) (UTBB) MOSFETs for high frequency applications. RF figures of merit (FoM), i.e. the current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax), are presented for different transistor geometries. The parasitic gate and source/drain series resistances, as well as capacitances and their effect on RF performance are analyzed.
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Citations
Kazemi Esfeh, B., Kilchytska, V., Barral, V., Planes, N., Haond, M., Flandre, D., & Raskin, J.-P. (2014). 28 nm FD SOI Technology Platform RF FoM. Proceedings of the 2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference. Published. 2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S 2014), Millbrae (USA). https://doi.org/10.1109/S3S.2014.7028208