Impact of mobility variation on threshold voltage extraction by transconductance change and gm/Id methods and its demonstration on advanced SOI MOSFETs

Rudenko, C.;Kilchytska, Valeriya;Md Arshad, Mohd Khairuddin;Raskin, Jean-Pierre;Flandre, Denis;et.al.
(2011) Sixth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’11 — Location: Granada, Spain (17.January.2011)

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Rudenko, C., Kilchytska, V., Md Arshad, M. K., Raskin, J.-P., Nazarov, A., & Flandre, D. (2011). Impact of mobility variation on threshold voltage extraction by transconductance change and gm/Id methods and its demonstration on advanced SOI MOSFETs. Proceedings of the Sixth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’11, 25-26. https://hdl.handle.net/2078.5/253372