Transconductance and mobility behaviors in UTB SOI MOSFETs with standard and thin BOX
(2009) EUROSOI Conference 2009 — Location: Göteborg (Sweden) (19.January.2009)
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- Authors
- Abstract
- In this paper, we analyze the effects of the front and back interfaces on the transport properties in undoped ultra-thin body (UTB) SOI MOSFETs with standard and ultra-thin buried oxides (BOX), using measurements of the transconductance, gate-to-channel capacitance and carrier mobility at various back gate biases.
- Affiliations
Lashkaryov Institute of Semiconductor Physics (ISP), Kyiv CEA-LETI, MINATEC Campus Ukraine National Academy of Science Institute of Semiconductor Physics
Citations
Rudenko, T., Kilchytska, V., Burignat, S., Raskin, J.-P., Andrieu, F., Faynot, O., Le Tiec, Y., Landry, K., Nazarov, A., Lysenko, V. S., & Flandre, D. (2009). Transconductance and mobility behaviors in UTB SOI MOSFETs with standard and thin BOX. Proceedings of the EUROSOI Conference 2009. Published. EUROSOI Conference 2009, Göteborg (Sweden). https://hdl.handle.net/2078.5/253359