Effect of the Temperature on Junctionless Nanowire Transistors Electrical Parameters down to 4K

Trevisoli, Renan;de Souza, Michelly;Doria, Ridrigo D.;Kilchytska, Valeriya;Pavanello, Marcelo Antonio;et.al.
(2014) 29th Symposium on Microelectronics Technology and Devices (SBMicro 2014) — Location: Aracaju (Brazil) (1.September.2014)

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Authors
  • Trevisoli, Renancentro Universitario da FEI, Brazil
    Author
  • de Souza, Michellycentro Universitario da FEI, Brazil
    Author
  • Doria, Ridrigo D.centro Universitario da FEI, Brazil
    Author
  • Kilchytska, ValeriyaUCLouvain
    Author
  • Flandre, DenisUCLouvain
    Author
  • Pavanello, Marcelo Antoniocentro Universitario da FEI, Brazil
    Author
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Abstract
The aim of this work is to analyze the operation of Junctionless Nanowire Transistors at liquid helium temperature, focusing the operation at linear regime. The drain current, the transconductance, the low field mobility, subthreshold slope, the interface trap density and the channel resistance are the key parameters under analysis.
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Trevisoli, R., de Souza, M., Doria, R. D., Kilchytska, V., Flandre, D., & Pavanello, M. A. (2014). Effect of the Temperature on Junctionless Nanowire Transistors Electrical Parameters down to 4K. 29th Symposium on Microelectronics Technology and Devices (SBMicro 2014), Aracaju (Brazil). https://doi.org/10.1109/SBMicro.2014.6940134