Variable Barrier Resonant Tunneling Transistor: Performance investigation of a Steep Slope, High On-Current device

Afzalian, Aryan;Colinge, Jean-Pierre;Flandre, Denis
(2010) 2010 SemOI Conference — Location: Kiev (Ukraine) (25.October.2010)

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Authors
  • Afzalian, AryanTyndall National Institute, University of Cork
    Author
  • Colinge, Jean-PierreTyndall National Institute, University of Cork
    Author
  • Flandre, DenisUCLouvain
    Author
Abstract
Performances of a new concept of nanoscale MOSFET, the Variable-Barrier Resonant Tunneling (VBRT) Transistor, are investigated through 3D Non-Equilibrium Green Function simulations. The presence of variable tunnel barriers designed to be at the onset of resonant tunneling regime enables subthreshold slope as steep as 45mV/dec together with high on-current. The 10nm Si VBRT nanowire investigated here could operate with a supply voltage as low as 0.5V with Ion/Ioff >104 and low leakage.
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Afzalian, A., Colinge, J.-P., & Flandre, D. (2010). Variable Barrier Resonant Tunneling Transistor: Performance investigation of a Steep Slope, High On-Current device. Proceedings of the 2010 SemOI Conference, 2. https://hdl.handle.net/2078.5/253348