Total-Dose Effects Caused by High-Energy Neutrons and gamma-Rays in Multiple-Gate FETs
(2010) 10th European Conference on Radiation and Its Effects on Components and Systems (RADECS - 09) — Location: Bruges (Belgium) (14.September.2009)
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- Abstract
- This work investigates the effects of high-energy neutrons and gamma-rays on multiple-gate FETs with different geometries (notably gate lengths down to 50 nm). The impact of radiation on device behavior is addressed through the variation of parameters such as threshold voltage, subthreshold slope, transconductance maximum and DIBL. It is shown that degradations caused by gamma-rays and high-energy neutrons with similar doses are largely similar. It is revealed that, on the contrary to the generally-believed immunity to irradiation, very short-channel FinFETs can become extremely sensitive to the total dose effect. The possible reasons are discussed.
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Kilchytska, V., Flandre, D., Alvarado, J., Collaert, N., Rooyakers, R., Militaru, O., & Berger, G. (2010). Total-Dose Effects Caused by High-Energy Neutrons and gamma-Rays in Multiple-Gate FETs. IEEE Transactions on Nuclear Science, 57(4), 1764-1770. https://doi.org/10.1109/TNS.2009.2037419 (Original work published 2010)