Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs
(2010) Microelectronics Reliability — Vol. 50, n° 9-11, p. 1852-1856 (2010)
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- Abstract
- This paper presents a compact model for partially depleted SOI MOSFETs, which allows for describing the total dose and the single event effects. It incorporates both temperature and charge buildup effects during irradiation. The developed model is implemented in a Verilog-A module. This original module can be coupled with Spice simulator, allowing for faster (time efficient) circuit simulations (comparing to numerical physical ones) at different bias, linear energy transfer (LET), buildup charges and temperatures. Better efficiency and flexibility than the standard current source method is achieved thanks to the direct link between the module and the irradiated transistor through the partially depleted SOI CMOS body contact terminal. Mixed-mode simulations of a partially depleted SOICMOS D flip-flop at different conditions (biases, LETs, temperatures, buildup charge densities) are used in order to validate the model. Well-known high tolerance of SOI circuits to a single event effects is demonstrated to be degraded with the total dose increase (appearing as a positive charge buildup), which is further enhanced at higher temperatures. (C) 2010 Elsevier Ltd. All rights reserved.
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Alvarado, J., Flandre, D., Boufouss, E. H., & Kilchytska, V. (2010). Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs. Microelectronics Reliability, 50(9-11), 1852-1856. https://doi.org/10.1016/j.microrel.2010.07.040 (Original work published 2010)