Comparative experimental study of the improved MOSFETs matching by using the hexagonal layout style

Peruzzi, Vinicius Vono;Renaux, Christian;Flandre, Denis;Gimenez, Salvador Pinillos
(2017) 2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro 2017) — Location: Fortaleza (Brazil) (28.August.2017)

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  • Peruzzi, Vinicius VonoDepartment of Electrical Engineering, Centro Universitário da FEI (FEI), Sao Bernardo do Campo/Brazil
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  • Renaux, ChristianUCLouvain
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  • Flandre, DenisUCLouvain
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  • Gimenez, Salvador PinillosDepartment of Electrical Engineering, Centro Universitário da FEI (FEI), Sao Bernardo do Campo/Brazil
    Author
Abstract
On this study, it is described an experimental comparative analysis of the devices matching regarding a 360 Metal-Oxide-Semiconductor Silicon-On-Insulator (SOI) Field Effect Transistors, n-type (nMOSFETs) sample, which were implemented with a hexagonal (Diamond) and rectangular gate geometries. Considering some relevant electrical parameters studied in the paper, the results indicate that the Diamond SOI nMOSFETs with α angles equal to 53.1° and 90° is able to be considered an alternative devices to boost about, at least 30% in average, the devices matching regarding those observed with the rectangular SOI MOSFET counterparts, considering the same gate areas and also the bias conditions.
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Peruzzi, V. V., Renaux, C., Flandre, D., & Gimenez, S. P. (2017). Comparative experimental study of the improved MOSFETs matching by using the hexagonal layout style. 2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro 2017), Fortaleza (Brazil). https://hdl.handle.net/2078.5/253330