Comprehensive Analytical Comparison of Ring Oscillators in FDSOI Technology: Current Starving Versus Back-Bias Control
(2022) IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS — Vol. 69, n° 5, p. 1883-1895 (2022)
Files
ComprehensiveAnalyticalComparisonofRingOscillatorsinFDSOITechnology-CurrentStarvingVersusBack-BiasControl.pdf
Open Access - Adobe PDF
- 2.55 MB
Details
- Authors
- Abstract
- Back-bias control is a new degree of freedom brought by fully-depleted silicon-on-insulator (FDSOI) CMOS technologies, which can be used to control the oscillation frequency of voltage-controlled ring oscillators (VCROs). The resulting VCRO architecture is called a back-bias-controlled oscillator (BBCO). This paper compares it with the conven- tional current-starved ring oscillator (CSRO) topology in terms of power consumption and phase noise figure-of-merit (FoM), while taking practical design constraints of process-voltage- temperature (PVT) robustness and frequency tuning range into account. The proposed comprehensive analysis takes advantage of relevant and compact analytical models, as well as extensive pre-layout simulation results. The comparison is made at four different target oscillation frequencies, which are representative of frequency synthesis for WiFi/Bluetooth/LPWAN wireless com- munications and of clock generation for smartphone/Internet-of- Things processors: 300 MHz, 868 MHz, 2.45 GHz, and 5.18 GHz. In 28-nm FDSOI technology, the results demonstrate that BBCOs can intrinsically reach 1.69 to 4.63× lower minimum power consumption and slightly better FoM values than CSROs
- Affiliations
Citations
Schramme, M., Van Brandt, L., Flandre, D., & Bol, D. (2022). Comprehensive Analytical Comparison of Ring Oscillators in FDSOI Technology: Current Starving Versus Back-Bias Control. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, 69(5), 1883-1895. https://doi.org/10.1109/TCSI.2022.3144527 (Original work published 2022)