A procedure to extract mobility degradation, series resistance and threshold voltage of SOI MOSFETs in the saturation region

Ortiz-Conde, A.;Garcia Sanchez, F.J.;Cerdeira, A.;Estrada, M.;Liou, J.J.;et.al.
(2001) 6th International conference on solid-state and integrated circuit technology 2001 — Location: Shanghai (China) (22.October.2001)

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  • Ortiz-Conde, A.Univ. Simon Bolivar, Caracas
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  • Garcia Sanchez, F.J.Univ. Simon Bolivar, Caracas
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  • Cerdeira, A.CINVESTAV
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  • Estrada, M.CINVESTAV
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  • Flandre, DenisUCLouvain
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  • Liou, J.J.UCLouvain
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Abstract
Parasitic series resistance and mobility degradation are two important parameters for modeling and circuit simulation of MOSFETs. We present a new method to extract these two parameters from the current-voltage characteristics of SOI MOSFETs biased in the saturation region. This method is based on an integration function which reduces errors associated with the extraction procedure. Measured data and simulation results of SOI MOSFETs are used to test and verify the present method.
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Ortiz-Conde, A., Garcia Sanchez, F. J., Cerdeira, A., Estrada, M., Flandre, D., & Liou, J. J. (2001). A procedure to extract mobility degradation, series resistance and threshold voltage of SOI MOSFETs in the saturation region. In Bing-Zong Li, Guo-Ping Ru, Xin-Ping Qu, Paul Yu, Hiroshi Iwai (ed.), Proceedings of the 6th International conference on solid-state and integrated circuit technology 2001 (pp. 887-890). IEEE Press. https://doi.org/10.1109/ICSICT.2001.982037