CMOS integrated poly-sigemems accelerometer above 0.18 µm technology
(2015) 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) — Location: Anchorage (USA) (21.June.2015)
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- Abstract
- The paper demonstrates the very first CMOS integrated monolithic MEMS (Micro Electro Mechanical System) accelerometer with SiGeMEMS technology on top of TSMC 0.18 μm CMOS technology. The developed SiGeMEMS technology shows the ability for integration above any standard foundry process. This has allowed us to build a surface micromachined accelerometer with a very small form factor. The accelerometer dimension, is one of the smallest of its kind for consumer application.. The total area of the accelerometer including the MEMS structure and the CMOS readout is 1.35 mm × 1.35 mm and the total thickness of the active device including MEMS and CMOS (excluding substrate ) is ~ 25 μm. Full functionality of the device is demonstrated with a sensitivity of ~0.14 volts/g This paper doesn't emphasize on the performance of an micro-accelerometer (merely serves as a test vehicle) but rather on technology development (SiGeMEMS above foundry CMOS).
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Ray Chaudhuri, A., Helin, P., van den Hoven, R., Severi, S., Rottenberg, X., Yazicioglu, R. F., Witvrouw, A., Francis, L., & Tilmans, H. A. C. (2015). CMOS integrated poly-sigemems accelerometer above 0.18 µm technology. 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), Anchorage (USA). https://hdl.handle.net/2078.5/253294