Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode
(2005) INFOS CONFERENCE 2005 — Location: Leuven (Belgium) (22.June.2005)
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- Abstract
- In this work, the effective mobility in n- and p-channel FinFETS with silicon oxynitride and HfO2 gate dielectrics and TaN gate electrode is studied as a function of the inversion charge density using a split C-V technique. The mobility behavior in narrow-fin devices is compared to that in quasi-planar wide-fin devices, and the mechanisms responsible for the observed differences are discussed. The devices with HfO2 and silicon oxynitride gate dielectrics exhibit similar mobility behavior.
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Rudenko, T., Collaert, N., De Gendt, S., Kilchytska, V., Jurczak, M., & Flandre, D. (2005). Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode. Proceedings of the INFOS CONFERENCE 2005. INFOS CONFERENCE 2005, Leuven (Belgium). https://hdl.handle.net/2078.5/253293