Nature of High-Temperature Charge Instability of Fully Depleted SOI MOSFETs
(2003) 11th International Symposium «Silicon-on-Insulator Technology and Devices” — Location: Paris (France) (28.April.2004)
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- Abstract
- Comparative study of the high-temperature charge instability (HTCI) phenomenon in the buried oxide (BOX) of SOI fully depleted inversion mode n-MOSFETs and high-temperature dynamic currents in capacitors, fabricated in SIMOX and UNIBOND materials with similar CMOS process sequence, is performed. Nature of the HTCI process is suggested to be associated with protons generation in imperfect region near the BOX/substrate interface at temperature above 200°C. Activation energy for protons generation process is obtained (1.2 eV for SIMOX and from 0.9 to 1.5 eV for UNIBOND), and the diffusion coefficient for the proton movement in the BOX is calculated (D=4x10-4exp(-0.55/kT), cm2/s).
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Nazarov, A. N., Lysenko, V. S., Colinge, J.-P., & Flandre, D. (2003). Nature of High-Temperature Charge Instability of Fully Depleted SOI MOSFETs. In S.Cristoloveanu (ed.), Proceedings of the 11th International Symposium «Silicon-on-Insulator Technology and Devices” (pp. 455-460). https://hdl.handle.net/2078.5/253290