22 nm FD-SOI MOSFET Figures of Merit at high temperatures upto 175 °C
(2022) 2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) — Location: Las Vegas, NV, USA (2022.January.16AD)
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C4_22_nm_FD-SOI_MOSFET_Figures_of_Merit_at_high_temperatures_upto_175_C.pdf
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Halder, A., Nyssens, L., Rack, M., Lederer, D., Kilchytska, V., & Raskin, J.-P. (2022). 22 nm FD-SOI MOSFET Figures of Merit at high temperatures upto 175 °C. SiRF 2022 Proceedings, p. 27-30. https://doi.org/10.1109/sirf53094.2022.9720052