Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET

Navarenho de Souza Fino, Leonardo;Davini Neto, Enrico;Aparecida Guazzelli da Silveira, Marcilei;Renaux, Christian;Pinillos Gimenez, Salvador;et.al.
(2015) Semiconductor Science and Technology — Vol. 30, n° 105024, p. 12 (2015)

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Authors
  • Navarenho de Souza Fino, LeonardoCentro Universitario da Fei, Electrical Engineering, Sao Bernardo do Campo, Brazil
    Author
  • Davini Neto, EnricoCentro Universitario da Fei, Electrical Engineering, Sao Bernardo do Campo, Brazil
    Author
  • Aparecida Guazzelli da Silveira, MarcileiCentro Universitario da Fei, Physics, Sao Bernardo do Campo, Brazil
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  • Renaux, ChristianUCLouvain
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  • Flandre, DenisUCLouvain
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  • Pinillos Gimenez, SalvadorCentro Universitario da Fei, Electrical Engineering, Sao Bernardo do Campo, Brazil
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Abstract
This paper performs an experimental comparative study of the total ionizing dose effects due to the x-ray radiation between the silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs) manufactured with octagonal gate geometry and the standard counterpart. Our main focus is on integrated transceivers for wireless communications and smart-power dc/dc converters for mobile electronics, where the transistor is used as the key switching element. It is shown that this innovative layout can reduce the total ionizing dose (TID) effects due to the special characteristics of the OCTO SOI MOSFET bird’s beak regions, where longitudinal electrical field lines in these regions are not parallel to the drain and source regions. Consequently, the parasitic MOSFETs associated with these regions are practically deactivated.
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Navarenho de Souza Fino, L., Davini Neto, E., Aparecida Guazzelli da Silveira, M., Renaux, C., Flandre, D., & Pinillos Gimenez, S. (2015). Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET. Semiconductor Science and Technology, 30(105024), 12. https://doi.org/10.1088/0268-1242/30/10/105024 (Original work published 2015)