Process alternative: SOI for heterogeneous systems

Flandre, Denis
(2000) Microelectronic Engineering — Vol. 54, p. 49-62 (2000)

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Abstract
SOI stands for Silicon-on-Insulator. The basic difference with conventional bulk silicon indeed lies in the starting material (Fig. 1): - in bulk Si, the active devices are built atop the surface of a wafer of monocristalline silicon. - in SOI, the top Si active layer is separated from the underlying mechanical substrate by a thick insulating layer, which leads to a number of advantageous device and circuit properties when compared to bulk Si. Eased CMOS processing, excellent device scalability, better device and circuit performance and potentially lower cost are among the reasons why SOI technology is considered as a serious contender for the fabrication of future integrated circuits [I].
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Flandre, D. (2000). Process alternative: SOI for heterogeneous systems. Microelectronic Engineering, 54, 49-62. https://doi.org/10.1016/S0167-9317(00)80058-1 (Original work published 2000)