Substrate Effects in sub-32 nm ultra thin SOI MOSFETs with thin buried oxide
(2009) EUROSOI Conference 2009 — Location: Göteborg (Sweden) (19.January.2009)
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- Authors
- Abstract
- This paper underpins the influence of space-charge condition at the substrate / BOX interface, as a function of the gate length, on the front threshold voltage (VTHf) and subthreshold slope (S) of sub-32 nm Ultra Thin body (UTB) SOI MOSFETs with very thin buried oxide (UTB2).
- Affiliations
CEA-LETI, MINATEC Campus
Citations
Burignat, S., Flandre, D., Kilchytska, V., Andrieu, F., Faynot, O., & Raskin, J.-P. (2009). Substrate Effects in sub-32 nm ultra thin SOI MOSFETs with thin buried oxide. Proceedings of the EUROSOI Conference. Published. EUROSOI Conference 2009, Göteborg (Sweden). https://hdl.handle.net/2078.5/253262