Analysis of Harmonic Distortion of Asymmetric Self-Cascode Association of SOI nMOSFETs Operating in Saturation
(2014) International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) — Location: Playa del Carmen (Mexico) (2.April.2014)
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AnalysisofHarmonicDistortionofAsymmetricSelf-CascodeAssociationofSOInMOSFETsOperatinginSaturation.pdf
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- Abstract
- This paper presents an experimental analysis of the harmonic distortion of asymmetric self-cascode (A-SC) association of SOI transistors. This goal is achieved by comparing the A-SC to the symmetric self-cascode (S-SC) configuration with different channel lengths. The non-linearity data have been obtained by applying the Integral Function Method to experimental measurements, for the evaluation of the total and third-order harmonic distortion. The results show that the asymmetric self-cascode provides lower total harmonic distortion than S-SC for all studied channel length associations. If a target distortion level is fixed, the A-SC enables an increase of input signal amplitude. On the other hand, smaller input signal amplitude and distortion are verified in the A-SC when fixing the output amplitude.
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Martins d’Oliveira, L., Trevisoli Doria, R., Pavanello, M. A., de Souza, M., & Flandre, D. (2014). Analysis of Harmonic Distortion of Asymmetric Self-Cascode Association of SOI nMOSFETs Operating in Saturation. International Caribbean Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen (Mexico). https://doi.org/10.1109/ICCDCS.2014.7016161