On true Silicon-on-Insulator MOSFETs: fabrication by Si layer transfer over the pre-defined cavity and electrical characterization

Kilchytska, Valeriya;Chung, Tsung Ming;Olbrechts, Benoit;Vovk, Ya.N.;Raskin, Jean-Pierre;et.al.
(2007) 5th International Symposium on Control of Semiconductor Interfaces for Next Generation ULSI Process Integrations - ISCSI-V — Location: Tokyo (Japan) (12.November.2007)

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Kilchytska, V., Chung, T. M., Olbrechts, B., Vovk, Ya. N., Flandre, D., & Raskin, J.-P. (2007). On true Silicon-on-Insulator MOSFETs: fabrication by Si layer transfer over the pre-defined cavity and electrical characterization. Proceedings of the 5th International Symposium on Control of Semiconductor Interfaces for Next Generation ULSI Process Integrations - ISCSI-V. Published. 5th International Symposium on Control of Semiconductor Interfaces for Next Generation ULSI Process Integrations - ISCSI-V, Tokyo (Japan). https://hdl.handle.net/2078.5/253259