On the gm/ID-based Threshold Voltage Extractions in Advanced SOI MOSFETs
(2013) Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2013) — Location: Paris (France) (21.January.2013)
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- Abstract
- In this work, using analytical modeling, simulations and experiments, we investigate the gm/ID-based methods for the threshold voltage extraction using two popular threshold voltage criteria applicable to advanced SOI MOSFETs, namely: the condition of the maximum of the second derivative of the inversion charge and of the equality of the drift and diffusion drain current components. Limitations and practical applicability of these methods are discussed.
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Rudenko, T., Md Arshad, M. K., Raskin, J.-P., Nazarov, A., Flandre, D., & Kilchytska, V. (2013). On the gm/ID-based Threshold Voltage Extractions in Advanced SOI MOSFETs. Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2013), p. 2. https://hdl.handle.net/2078.5/253258