Improved DIBL in Ultra Thin Body SOI MOSFETs with Ultra Thin Buried Oxide and inverted substrate
(2010) ULtimate Integration on Silicon - ULIS’10 — Location: Glasgow, Scotland (17.March.2010)
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Md Arshad, M. K., Raskin, J.-P., Kilchytska, V., Flandre, D., Faynot, O., Scheiblin, P., & Andrieux, F. (2010). Improved DIBL in Ultra Thin Body SOI MOSFETs with Ultra Thin Buried Oxide and inverted substrate. Proceedings of the ULtimate Integration on Silicon - ULIS’10, 113-116. https://hdl.handle.net/2078.5/253254