Low-frequency noise in asymmetric self-cascode FD SOI
(2016) 31st Symposium on Microelectronics and Devices (SBMicro 2016) — Location: Sao Paulo (Brazil) (29.August.2016)
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- Abstract
- This paper investigates the origin of low-frequency noise in Asymmetric Self-Cascode Fully Depleted SOI nMOSFETs biased in linear regime with regards to the variation of gate voltage and the channel doping concentration through experimental results.
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Citations
Assalti, R., Doria, R. T., Pavanello, M. A., de Souza, M., & Flandre, D. (2016). Low-frequency noise in asymmetric self-cascode FD SOI. 31st Symposium on Microelectronics and Devices (SBMicro 2016), Sao Paulo (Brazil). https://hdl.handle.net/2078.5/253252