TRAPPIST/sub e/ pixel sensor with 2 mu m SOI technology
(2009) 2009 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC 2009) — Location: Orlando, FL, USA (25.October.2009)
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- Abstract
- TRAPPISTe-1 (Tracking Particle for Physics Instrumentation in SOI Technology) is a R&D project for the study of the feasibility to build a Monolithic Active Pixel Sensor (MAPS) with Silicon On Insulator (SOI). In this paper we present the first prototype of this series of sensors. This first prototype has been build with a 2 mu m technology in Electronic Engineer Department SOI production facility in Louvain-la-Neuve. Also additional measurements of a SOI diode detector have been performed, which has been fabricated usign the same technology process, to study the different bias possibilities in order to decrease the strength of back gate effect.
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Martin, E., Cortina Gil, E., Yee, L. S., Renaux, C., & Flandre, D. (2009). TRAPPIST/sub e/ pixel sensor with 2 mu m SOI technology. In Bo Yu; (ed.), 2009 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC 2009) (p. p. 1692-1695). IEEE. https://doi.org/10.1109/NSSMIC.2009.5402237