Effect of parasitic elements on UTBB FD SOI MOSFET RF figures of merit
(2013) Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2013) — Location: Paris (France) (21.January.2013)
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- Abstract
- This work details the harmful effect of parasitic resistances and capacitances on RF figures of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) FD SOI n-MOSFETs. It is demonstrated that UTBB device intrinsically can reach significantly high fT provided the reduction of parasitic elements.
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Citations
Md Arshad, M. K., Kilchytska, V., Emam, M., Andrieu, F., Flandre, D., & Raskin, J.-P. (2013). Effect of parasitic elements on UTBB FD SOI MOSFET RF figures of merit. Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2012), p. 2. https://hdl.handle.net/2078.5/253238