On the great potential of non-doped SOI MOSFETs for analog applications
(2004) 5th European Workshop on Ultimate Integration of Silicon (ULIS 2004) — Location: Leuven (Belgium) (11.March.2004)
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- Abstract
- In this work we discuss the potential applicability of SOI MOS transistors with non-doped channels for analog applications. We experimentally demonstrate for the first time their two main advantages for low-voltage low-power analog applications: 1) threshold voltage is slightly negative and well controlled; 2) enhanced transconductance due to absence of the channel doping. Additional benefits, such as improved Gm/Id, attenuation of floating-body effects and decreasing of non-linearities are described. Our investigation supported by measurements on 0.12μm PD SOI CMOS process, further demonstrates that high-performance analog FD devices can be created on PD wafers if no channel implantation is used. Finally, a sharp jump from PD-to-FD operation in long channel intrinsic devices is reported and explained for the first time.
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Kilchytska, V., Levacq, D., Vancaillie, L., & Flandre, D. (2004). On the great potential of non-doped SOI MOSFETs for analog applications. In IMEC (ed.), Proceedings of the 5th European Workshop on Ultimate Integration of Silicon (ULIS 2004) (pp. 137-140). https://hdl.handle.net/2078.5/253232