Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C
(2000) International Conference on Microelectronics and Packaging — Location: Manaus (Brésil) (18.September.2000)
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Universidade de São Paulo Laboratório de Sistemas Integráveis
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Bellodi, M., Iniguez, B., Flandre, D., & Martino, J. A. (2000). Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C. Proceedings of the International Conference on Microelectronics and Packaging. International Conference on Microelectronics and Packaging, Manaus (Brésil). https://hdl.handle.net/2078.5/253229