An analytical 3D model for short-channel effects in undoped FinFETs
(2015) Journal of Computational Electronics — Vol. 14, n° 2, p. 500-505 (2015)
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- Abstract
- An analytical and scalable model for the threshold voltage in FinFETs has been developed by solving the 3-D Poisson equation using appropriate techniques. The model is also based on a physical analysis of the conduction path. The mobile charge term was considered in the 3-D Poisson’s equation to be solved. The threshold voltage is defined as the gate voltage to obtain a certain threshold charge density. Due to its 3-D basis, the model inherently accounts for short-channel effects, such as the threshold voltage roll-off and the Drain Induced Barrier Lowering effect. A very good agreement with 3-D numerical simulations has been observed.
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Citations
El Hamid, H. A., Iniguez, B., Kilchytska, V., Flandre, D., & Ismail, Y. (2015). An analytical 3D model for short-channel effects in undoped FinFETs. Journal of Computational Electronics, 14(2), 500-505. https://doi.org/10.1007/s10825-015-0678-0 (Original work published 2015)