Low-frequency noise of submicron graded-channel SOI nMOSFETs at high temperature

Molto, A.R.;Doria, R.T.;de Souza, M.;Flandre, Denis;Pavanello, M.A.
(2016) 31st Symposium on Microelectronics Technology and Devices (SBMicro) — Location: Salvador (Brazil) (29.August.2016)

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  • Molto, A.R.Centro Universitario FEI, Sao Bernardo do Campo/Brazil
    Author
  • Doria, R.T.Centro Universitario FEI, Sao Bernardo do Campo/Brazil
    Author
  • de Souza, M.Centro Universitario FEI, Sao Bernardo do Campo/Brazil
    Author
  • Flandre, DenisUCLouvain
    Author
  • Pavanello, M.A.Centro Universitario FEI, Sao Bernardo do Campo/Brazil
    Author
Abstract
This work presents, for the first time, the Low Frequency Noise (LFN) of submicron graded-channel (GC) SOI nMOSFETs as a function of temperature in the range from 300 K up to 500 K. The measured GC SOI devices are from a 150 nm commercial technology from OKI Semiconductors. The results were obtained through experimental measurements in a device with channel length (L) of 240 nm, working in linear regime at VDS=50mV. It is shown that the origin of the noise changes from carrier number fluctuations to mobility fluctuations as the temperature is increased. Additionally, the generation and recombination noise plays a significant role on the overall noise with the temperature rise.
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Molto, A. R., Doria, R. T., de Souza, M., Flandre, D., & Pavanello, M. A. (2016). Low-frequency noise of submicron graded-channel SOI nMOSFETs at high temperature. 31st Symposium on Microelectronics Technology and Devices (SBMicro), Salvador (Brazil). https://hdl.handle.net/2078.5/253201