High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs
(2010) 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010) — Location: Gaeta (Italy) (11.October.2010)
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- Abstract
- A comparative investigation of high-energy neutrons effect on strained and non-strained devices with different geometries is presented. Both single-gate planar and multiple-gate (MuG) silicon-on-insulator (SOI) devices are considered. Device response to the neutron irradiation is assessed through the variations of threshold voltage and transconductance maximum. The difference between strained and nonstrained device response to the high-energy neutrons exposure is clearly evidenced. The reasons for such a difference are discussed. Analysis of the experimental results allows for suggesting that strain relaxation is one of the probable causes.
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Kilchytska, V., Alvarado Pulido, J. J., Put, S., Collaert, N., Simoen, E., Claeys, C., Militaru, O., Berger, G., & Flandre, D. (2010). High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. Proceedings of the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010), 6. https://hdl.handle.net/2078.5/253190