Substrate effects on the small-signal characteristics of SOI MOSFET's
(2002) 32nd European Solid-State Device Research Conference (ESSDERC 2002) — Location: Florence (Italy) (24.September.2002)
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- Abstract
- The present paper investigates the influence of the silicon substrate on the AC characteristics of fully-depleted (FD) and partially-depleted (PD) silicon-on-insulator (SOI) MOSFETs. For the first time it is shown that the presence of the substrate underneath the buried oxide results in two transitions (i.e. zero-pole doublets) in the output conductance vs frequency characteristics, depending on the space-charge conditions at the buried oxide-substrate interface. The paper discusses the analytical device modelling to include the influence of the substrate in CAD circuit simulations.
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Kilchytska, V., Levacq, D., Lederer, D., Raskin, J.-P., & Flandre, D. (2002). Substrate effects on the small-signal characteristics of SOI MOSFET’s. Proceedings of the 32nd European Solid-State Device Research Conference (ESSDERC 2002), 519-522. https://doi.org/10.1109/ESSDERC.2002.194982