Meta-stable DIP (MSD) Effect in SOI FinFETs

Jun, Jang-Gn;Cristoloveanu, Sorin;Bawedin, Maryline;Flandre, Denis
(2006) The 13th Korean Conference on Semiconductors — Location: Jeju (Korea) (23.February.2006)

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Authors
  • Jun, Jang-GnChungnam National University
    Author
  • Cristoloveanu, SorinInstitut de Microélectronique, Electromagnétisme et Photonique (IMEP)
    Author
  • Bawedin, MarylineUCLouvain
    Author
  • Flandre, DenisUCLouvain
    Author
Abstract
The meta-stable dip (MSD) effect is demonstrated and characterized in SOI FinFETs. With ascending scan of front-gate voltage (VG1), the magnitude of drain current (ID) tends to be fixed within a specific region of the front-gate voltage and this leads to a dip of transconductance (gm). The dip width can be modulated through a control of bias condition or measurement speed such as back-gate voltage (VG2), drain voltage (VD) and step size of the front-gate voltage. From the dual-gate transient measurement, it is found that the MSD effect is highly dependent on the floating-body effect. In SOI FinFETs, the MSD effect is significantly affected by the fin width due to the fringing electric field of the lateral gates.
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Jun, J.-G., Cristoloveanu, S., Bawedin, M., & Flandre, D. (2006). Meta-stable DIP (MSD) Effect in SOI FinFETs. Proceedings of the 13th Korean Conference on Semiconductors, 1197-1198. https://hdl.handle.net/2078.5/253185