Compact modeling of the high temperature effect on the single event transient current generated by heavy ions in SOI 6T-SRAM

Boufouss, El Hafed;Alvarado Pulido, José Joaquin;Flandre, Denis
(2010) International Conference on High Temperature Electronics (HITEC 2010) — Location: Albuquerque (New Mexico) (11.May.2010)

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Authors
  • Boufouss, El HafedUCLouvain
    Author
  • Alvarado Pulido, José JoaquinUCLouvain
    Author
  • Flandre, DenisUCLouvain
    Author
Abstract
A temperature dependence analysis of the single event transient current induced by heavy ions irradiation is performed in the range of 300K to 500K on a 1μm SOI CMOS MOSFET standard 6T-SRAM cell. The Sentaurus TCAD mixed-mode numerical simulation showed a significant impact of the temperature on the current induced by the radiation and as a result, an increase of the 6T-SRAM sensitivity upon radiation. A SOI MOSFET compact model introduced in SPICE as a Verilog-A module reproducing the single event effects was developed. This model shows a very good agreement with the TCAD simulations results but with a drastic reduction of the simulation time. Furthermore this model could be extended to other circuits simulations. This result is of importance to allow for extensive circuit design studies which cannot be carried out with TCAD physical simulations.
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Boufouss, E. H., Alvarado Pulido, J. J., & Flandre, D. (2010). Compact modeling of the high temperature effect on the single event transient current generated by heavy ions in SOI 6T-SRAM. Proceedings of the HITEC Conference, 77-82. https://hdl.handle.net/2078.5/253183