Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs

Kilchytska, Valeriya;Alvarado Pulido, José Joaquin;Collaert, N.;Rooyakers, R.;Flandre, Denis;et.al.
(2010) Sixth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2010) — Location: Grenoble (France) (25.January.2010)

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  • Kilchytska, ValeriyaUCLouvain
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  • Alvarado Pulido, José JoaquinUCLouvain
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  • Collaert, N.IMEC, Leuven
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  • Rooyakers, R.IMEC, Leuven
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  • Flandre, DenisUCLouvain
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Kilchytska, V., Alvarado Pulido, J. J., Collaert, N., Rooyakers, R., Put, S., Claeys, C., & Flandre, D. (2010). Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs. Proceedings of the Sixth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2010), p. 119-120. https://hdl.handle.net/2078.5/253176