RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs
(2012) IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2012) — Location: Santa Clara (USA) (16.January.2012)
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- Abstract
- RF performance of ultra-thin body with ultra-thin buried oxide (BOX), so-called UTBB, MOSFETs with gate length down to 30 nm is presented. Current gain cut-off frequency fT and maximum oscillation frequency fmax of 160 GHz and 143 GHz, respectively, are demonstrated. Based on an accurate extraction of the small-signal equivalent circuit of UTBB MOSFET over a wide frequency range, it is revealed that ground plane (GP) implementation (i.e. highly-doped region underneath the BOX)does not increase the high frequency parasitic capacitances, and thus does not degrade the RF performance of UTBB devices.
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Md Arshad, M. K., Emam, M., Kilchytska, V., Andrieu, F., Flandre, D., & Raskin, J.-P. (2012). RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs. Proceedings of the 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of papers (SiRF 2012), 105-108. https://doi.org/10.1109/SiRF.2012.6160155